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Electrical spin injection and transport in germanium

2011; American Physical Society; Volume: 84; Issue: 12 Linguagem: Inglês

10.1103/physrevb.84.125323

1550-235X

Yi Zhou, Wei Han, Li-Te Chang, Faxian Xiu, Minsheng Wang, Michael Oehme, Inga A. Fischer, Jörg Schulze, Roland Kawakami, Kang L. Wang,

Topological Materials and Phenomena

We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.