Evidence for donor-gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy at low temperatures
1992; American Institute of Physics; Volume: 61; Issue: 25 Linguagem: Inglês
10.1063/1.107993
ISSN1520-8842
AutoresS.A. McQuaid, R. C. Newman, M. Missous, Steve O’Hagan,
Tópico(s)Semiconductor materials and devices
ResumoInfrared absorption due to localized vibrational modes of silicon impurities in heavily doped GaAs grown by molecular beam epitaxy at low temperatures has been measured. Almost all Si atoms were found to occupy Ga sites. Second neighbor pairs SiGa-YGa were also detected in a concentration of ∼2×1018 cm−3 and it was deduced that Y was a gallium vacancy (VGa). These results provide the first direct evidence for the presence of a high concentration of gallium vacancies in GaAs grown at low temperatures.
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