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High flux VUV beamline for photochemical processing study at Photon Factory (abstract)

1989; American Institute of Physics; Volume: 60; Issue: 7 Linguagem: Inglês

10.1063/1.1140785

1527-2400

K. Tanaka, Hidemi Kato, Takashi Kikuchi, A. Yagishita,

Advanced Electron Microscopy Techniques and Applications

Recent progress in photochemical processing involving photochemical etching and photochemical vapor deposition are really remarkable and such processes become the most promising candidates as a next-generation VLSI fabrication technology. Thus the study to elucidate the reaction mechanism of the photochemical processing is of both fundamental and technological importance. In order to promote this study, we have designed and constructed a new beamline at Photon Factory (BL 12C). It consists of three major parts; a prefocusing mirror, a multilayer mirror monochromator, and a differential pumping system. A Pt-coated SiC toroidal mirror (Rh:0.539 m, Rv:490 m) is installed in a prefocusing mirror chamber (18.3 m from the source), accepts 5.0-mrad horizontal and 1.0-mrad vertical divergence of the synchrotron radiation, reflects it 3.8° upward, and focuses it onto the middle of the exit arm of the monochromator (32.3 m from the source). A multilayer mirror, which was designed and fabricated by Yamamoto et al., so as to get high reflectance around 100 eV of photon energy (see the preceding paper), is installed in the monochromator, steers SR beam downward, and selects photon energy by changing an incident angle. With this arrangement, a quasimonochromatic and bright beam is obtained in the energy region 80–100 eV. The output flux is expected to be ∼1015 photons/s⋅10% bw with 200-mA ring current.