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Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range

2006; Optica Publishing Group; Volume: 14; Issue: 7 Linguagem: Inglês

10.1364/oe.14.002753

1094-4087

Yongqiang Wei, Johan Gustavsson, Mahdad Sadeghi, Shumin Wang, Anders Larsson, Pekka Savolainen, P. Melanen, Pekko Sipilä,

Semiconductor Lasers and Optical Devices

Ridge waveguide 1.3 mum GaInNAs lasers were fabricated from high quality double quantum well material grown by molecular beam epitaxy. Short cavity (250 mum) lasers have low threshold currents and small temperature dependencies of threshold current and slope efficiency, with a characteristic temperature of the threshold current as high as 200 K. The temperature stability allows for uncooled 2.5 Gb/s operation up to temperatures as high as 110 degrees C with a constant modulation voltage and only the bias current adjusted for constant average output power. Under these conditions, an extinction ratio larger than 6 dB and a spectral rms-width smaller than 2 nm are obtained.