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RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials

1990; Institute of Physics; Volume: 29; Issue: 11A Linguagem: Inglês

10.1143/jjap.29.l2096

1347-4065

Toshihiro Shimada, Hideki Yamamoto, Koichiro Saiki, Atsushi Koma,

Inorganic Chemistry and Materials

Diffracted beam intensities in reflection high energy electron diffraction (RHEED) have been observed to oscillate during the epitaxial growth of NbSe 2 and MoSe 2 on GaAs(111) substrates. This is the first observation of RHEED oscillation in layered materials, to the author's knowledge. Monolayer- and bilayer-mode oscillations have been observed at different diffraction points. The existence of the bilayer-mode oscillation leads to the determination of the polytype of the grown films. It has also been shown that the antiphase portion of the grown film is considerably small.