Recoil implantation of antimony into silicon
1981; Elsevier BV; Volume: 182-183; Linguagem: Inglês
10.1016/0029-554x(81)90674-1
ISSN1878-3759
AutoresA. Grob, J.J. Grob, N. Mesli, Daniela C. Salles, P. Siffert,
Tópico(s)Silicon and Solar Cell Technologies
Resumo50 and 300 keV krypton ion beams have been used to introduce Sb atoms in silicon from thin evaporated layers deposited on the surface. The ratio of Sb recoils per incident atom has been investigated by Rutherford backscattering spectroscopy (RBS), varying the thickness of the film and the dose of krypton ions. The results are compared with the transmission sputtering theory of Sigmund. Good agreement is achieved taking into account the binding energy near a bulk value (≅20 eV). The optimum yield is obtained when the layer thickness corresponds to the depth 〈x〉D of the maximum energy deposition of krypton in antimony as calculated by Winterbon et al.. The depth distribution of recoiling atoms has also been studied. Furnace and laser annealing treatments have been performed in order to regrow the amorphous region induced by krypton ions and to place antimony in electrically active positions. RBS and sheet resistivity measurements have allowed identification of the best annealing conditions. Results on the electrical behaviour of such PN junctions are presented.
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