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Robust Hybrid Memristor-CMOS Memory: Modeling and Design

2013; Institute of Electrical and Electronics Engineers; Volume: 21; Issue: 11 Linguagem: Inglês

10.1109/tvlsi.2012.2227519

1557-9999

Baker Mohammad, Dirar Homouz, Hazem Elgabra,

Ferroelectric and Negative Capacitance Devices

In this paper, we explore various aspects of memristor modeling and use them to propose improved access operations and design of a memristor-based memory. We study the current mathematical and SPICE modeling of memristors and compare them with known device specifications. Based on this survey of existing models, we adopt an improved mathematical model of the memristor that captures the well-established features of memristive devices. This modeling is used to analyze the time and voltage characteristics of stable read and write operations. The tradeoffs between the various design parameters such as voltage, frequency, noise margin, and area are also analyzed. Based on the device modeling, we propose a hybrid CMOS-memristor memory cell and architecture that addresses the limitations of memristor such as state drift, cell-cell interference, and refresh requirements. Memristor is used as a state element, and CMOS-based transistors are used to isolate, control, decode, and inter operate the logic. We verify our design using SPICE simulation using a 28-nm model for CMOS and a modified memristor model.