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Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

2005; American Institute of Physics; Volume: 97; Issue: 10 Linguagem: Inglês

10.1063/1.1897070

1520-8850

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, Menno J. Kappers, C. J. Humphreys, E. J. Thrush,

Nanowire Synthesis and Applications

We have studied the low-temperature (T=6K) optical properties of a series of InGaN∕GaN single-quantum-well structures with varying indium fractions. With increasing indium fraction the peak emission moves to lower energy and the strength of the exciton–longitudinal-optical (LO)-phonon coupling increases. The Huang–Rhys factor extracted from the Fabry–Pérot interference-free photoluminescence spectra has been compared with the results of a model calculation, yielding a value of approximately 2nm for the in-plane localization length scale of carriers. We have found reasonable agreement between this length scale and the in-plane extent of well-width fluctuations observed in scanning transmission electron microscopy high-angle annular dark-field images. High-resolution transmission electron microscopy images taken with a short exposure time and a low electron flux have not revealed any evidence of gross indium fluctuations within our InGaN quantum wells. These images could not, however, rule out the possible existence of small-scale indium fluctuations, of the order of a few at. %.