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Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates

2000; American Institute of Physics; Volume: 18; Issue: 3 Linguagem: Inglês

10.1116/1.591458

1520-8567

Wei-Cheng Wilson Lin, M. C. Tamargo, H.-Y. Wei, Wendy L. Sarney, L. Salamanca‐Riba, Brian Fitzpatrick,

Perovskite Materials and Applications

Hexagonal ZnMgSSe bulk substrates have been synthesized as attractive alternatives for the homoepitaxial growth of II–VI device structures. Hexagonal ZnSe epilayers and ZnCdSe/ZnSe quantum well structures were grown on these substrates by molecular-beam epitaxy. The cross-sectional transmission electron microscopy image shows that the ZnSe epilayer replicated the hexagonal structure of the substrate. The 6 K photoluminescence (PL) spectra of the hexagonal ZnSe layers show strong impurity-bound-exciton emissions at about 2.796 eV. No Y-line (defect-related emission) is observed in the spectra suggesting good substrate preparation and growth conditions. The 77 K PL spectra of hexagonal quantum well structures show dominant emission from the ZnCdSe well layer. Double-crystal x-ray rocking curves indicate that the ZnSe epitaxial layers and the substrates are near lattice matched. Doping of hexagonal ZnSe with nitrogen was performed. Photoluminescence spectra suggest that these samples exhibit donor-acceptor-pair emission with typical characteristics of heavily doped (compensated) samples.