High-resolution elemental profiles of the silicon dioxide∕4H-silicon carbide interface
2005; American Institute of Physics; Volume: 97; Issue: 10 Linguagem: Inglês
10.1063/1.1904728
ISSN1520-8850
AutoresK.-C. Chang, Yan Cao, Lisa M. Porter, J. Bentley, Sarit Dhar, L. C. Feldman, John R. Williams,
Tópico(s)Thin-Film Transistor Technologies
ResumoHigh-resolution elemental profiles were obtained from SiO2(N)∕4H-SiC structures by spatially resolved electron energy-loss spectroscopy (EELS) performed in the scanning transmission electron microscopy mode. The results show that following annealing in NO, N was exclusively incorporated within ∼1nm of the SiO2(N)∕4H-SiC interface. Mean interfacial nitrogen areal densities measured by EELS were ∼(1.0±0.2)×1015cm−2 in carbon-face samples and (0.35±0.13)×1015cm−2 in Si-face samples; these results are consistent with nuclear reaction analysis measurements. Some of the interface regions in the C-face samples also showed excess carbon that was not removed by the NO annealing process, in contrast with previous results on Si-face samples.
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