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Photoluminescence Properties of CuGaSe 2 Grown by Iodine Vapour Transport

1978; Institute of Physics; Volume: 17; Issue: 9 Linguagem: Inglês

10.1143/jjap.17.1555

1347-4065

Masami Susaki, Takeshi Miyauchi, Hiromichi Horinaka, Nobuyuki Yamamoto,

nanoparticles nucleation surface interactions

The photoluminescence spectra of CuGaSe2 are measured on melt-solidified crystals, iodine vapour transported as-grown crystals and annealed crystals in various conditions. From the change in the spectra among them and the influence of annealing on luminescence, it is concluded that the iodine impurity acts as a deep donor which has been unintentionally incorporated into crystals during growth, and that the selenium vacancy acts as a shallow donor. The latter defect can be filled back by annealing in selenium vapour at 600°C. All photoluminescence bands observed in the iodine vapour transported crystals are explained in trems of these two donors (0.38 eV and 80 meV) and one acceptor (40 meV), which is probably due to the copper vacancy.