Portal de Periódicos da CAPES

Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA

2011; American Institute of Physics; Volume: 110; Issue: 6 Linguagem: Inglês

10.1063/1.3627233

1520-8850

Tao Han, F. Y. Meng, S. Zhang, Xue Cheng, J. I. Oh,

Electronic and Structural Properties of Oxides

We report the bandgap and electronic properties of wurtzite ZnO doped with elements IIA or/and IIIA, investigated using both theoretical and experimental methods. With wurtzite ZnO co-doped with B and Mg (denoted as ZnO:[B,Mg]) grown via metalorganic chemical vapor deposition, we have observed that both the bandgap and the conductivity can be widely tunable with the doping levels. From first-principles calculations of wurtzite ZnO:Mg, we show that IIA doping elements have a great impact on the widening of the bandgap. Also, from a newly developed calculation method for investigating the electronic properties of wurtzite ZnO:Al, we have found that IIIA doping elements play an important role in tailoring the conductivity.