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Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)

2002; American Physical Society; Volume: 66; Issue: 3 Linguagem: Inglês

10.1103/physrevb.66.035312

1095-3795

J. W. Kim, Han Woong Yeom, Yong‐Duck Chung, K. Jeong, C. N. Whang, M. K. Lee, Hyun Joon Shin,

Electronic and Structural Properties of Oxides

Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and ${\mathrm{N}}_{2}\mathrm{O}$ are systematically compared. Two distinct N $1s$ components are resolved for both films with a binding-energy difference of \ensuremath{\sim}0.61 eV, which are assigned to the N atoms at the interfaces and those in the ${\mathrm{SiO}}_{2}$ matrix. Both components are unambiguously attributed to represent a ${\mathrm{N}\ensuremath{-}\mathrm{S}\mathrm{i}}_{3}$ like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between ${\mathrm{N}}_{2}\mathrm{O}$- and NO-nitrided films and the interface suboxide species identified by Si $2p$ core levels are discussed.