Charge transport properties of undoped SI LEC GaAs solid-state detectors
1993; Elsevier BV; Volume: 326; Issue: 1-2 Linguagem: Inglês
10.1016/0168-9002(93)90371-n
ISSN1872-9576
AutoresS.P. Beaumont, R. Bertin, C.N. Booth, M. Bruzzi, C. M. Buttar, L. Carraresi, F. Cindolo, M. Colocci, F.H. Combley, S. D’Auria, S. DeGennaro, D. Del Papa, M. Doḡru, M. Edwards, F. Fiori, F. Foster, A. Francescato, Yaonan Hou, P.A. Houston, B.K. Jones, John Lynch, B. Lisowski, J. Matheson, F. Nava, Marco Nuti, V. OʼShea, P.G. Pelfer, M.H. Pischedda, C. Raine, João Santana, I.J. Saunders, P. Seller, I.O. Skillikorn, T. Sloan, K. Smith, N. Tartoni, I. ten Have, R.M. Turnbull, A. Vinattieri, A. Zichichi,
Tópico(s)Photocathodes and Microchannel Plates
ResumoThe GaAs detectors for minimum ionizing particles fabricated with commercial undoped SI GaAs show good quality as minimum ionizing particle detectors. A discussion is given of the present understanding of the charge transport mechanism in the detectors since it influences their charge collection efficiency.
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