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Development of advanced reticle inspection apparatus for hp 65-nm node device and beyond

2006; SPIE; Volume: 6283; Linguagem: Inglês

10.1117/12.683579

1996-756X

Nobutaka Kikuiri, Shingo Murakami, Hideo Tsuchiya, Motonari Tateno, Kenichi Takahara, Shinichi Imai, Ryoichi Hirano, Ikunao Isomura, Yoshitake Tsuji, Yukio Tamura, Kenichi Matsumura, Kinya Usuda, Masao Otaki, Osamu Suga, K. Ohira,

Surface Roughness and Optical Measurements

The usage of ArF immersion lithography for hp 65nm node and beyond leads to the increase of mask error enhancement factor in the exposure process. Wavelength of inspection tool is required to consistent with wavelength of lithography tool. Wavelength consistency becomes more important by the introduction of phase shift mask such as Tri-tone mask and alternating phase shift mask. Therefore, mask inspection system, whose inspection light wavelength is 199nm, has been developed. This system has transmission and reflection inspection mode, and throughput, using 70 nm pixel size, were designed within 2hours per mask. The experimental results show expected advantages for Die-to-Die and Die-to-Database inspection compared with the system using 257nm inspection optics. Shorter wavelength effect makes transmission inspection sensitivity increase, and realizes 40nm size particle inspection. As for the phase shift mask, the difference of gray value between the area with phase defect and without phase defect was clear relatively. In this paper, specifications and design, experimental results are described.