Carbon nitride thin films synthesized at high temperature by using RF-plasma PLD
1999; Elsevier BV; Volume: 198-199; Linguagem: Inglês
10.1016/s0022-0248(98)01109-9
ISSN1873-5002
AutoresYoke Khin Yap, Y. Mori, S. Kida, Toshihiro Aoyama, T. Sasaki,
Tópico(s)Metal and Thin Film Mechanics
ResumoCarbon nitride (CN) thin films were synthesized at 600°C. Despite the high synthesis temperature, the nitrogen content of CN films was observed to increase with the increase of negative DC bias voltage of Si substrate as determined by X-ray photoelectron spectroscopy. Transformation of CN binding states was found to proceed with the increase of bias voltage as indicated by a series of Fourier transform infrared spectra. These films were dominated by tetrahedral sp3 C–N binding state at a substrate bias voltage above −120 V. As observed from Raman spectroscopy, the carbon matrix was transformed from graphitic sp2 into sp3 carbon hybridization. Mechanism of tetrahedral CN phase formation at high temperature is proposed.
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