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Interface instability of r.f. sputtered silicon nitride films on silicon

1974; Elsevier BV; Volume: 21; Issue: 2 Linguagem: Inglês

10.1016/0040-6090(74)90111-4

1879-2731

P.C.Y. Chen,

Ion-surface interactions and analysis

Abstract Silicon nitride films have been deposited on sputter-etched silicon by r.f. sputtering. The quality of the sputtered nitride films was demonstrated by infrared spectrum analysis and measurement of the refractive index and dielectric constants. The interface instability of the Si3N4Si structure was investigated by MNS (metal-nitride-silicon) techniques. The C-V measurements revealed that Si injection (injection and/or extraction from the silicon side) is the dominating factor causing trapping instability in the MNS devices and that the application of positive or negative bias voltages is equally effective in producing Si injection. Little ion movement or polarization effect was observed under bias-and-temperature stresses. C-V traces were also plotted at liquid nitrogen temperature and the effect of Si injection was found to be the same as at room temperature. The commonly used tunneling model is employed to account for the temperature-insensitive instability at the Si3N4Si interface.