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Lattice location and annealing studies of heavy ion implanted diamond

1993; Elsevier BV; Volume: 80-81; Linguagem: Inglês

10.1016/0168-583x(93)96101-h

1872-9584

H. Hofsäß, M. Restle, U. Wahl, E. Recknagel,

Advanced Materials Characterization Techniques

The lattice location of ion implanted In into type IIa diamond and the annealing of implantation damage was studied with the emission channeling technique. Radioactive 111In was implanted into IIa diamonds with 〈110〉 surface orientation at 300 K, at energies of 120 and 350 keV and at doses between 5 × 1012 and 5 × 1013 cm−2. Axial channeling effects of the emitted conversion electrons were measured after annealing to different temperatures up to 1473 K. For implantation doses below 1013 cm−2 two stages for annealing of implantation defects are observed, one between 300 and 600 K and the other above 1000 K. The appearance of strong channeling effects in all major axial directions after annealing at 1473 K indicates a significant substitutional fraction of In atoms. From a comparison with calculated emission channeling profiles a substitutional fraction of up to 45% was determined. The experimental data are also consistent with a close-to-substitutional fraction of about 50–60% assuming small mean displacements of the In atoms of about 0.1 Å. A significant fraction of In on tetrahedral interstitial sites can be ruled out.