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Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

2011; American Institute of Physics; Volume: 99; Issue: 21 Linguagem: Inglês

10.1063/1.3661167

1520-8842

A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, Jordi Llobet, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, Peter Michael Gammon, Michael R. Jennings, M. Porti, A. Bayerl, Mario Lanza, M. Nafrı́a,

Advancements in Semiconductor Devices and Circuit Design

As GaN technology continues to gain popularity, it is necessary to control the ohmic contact properties and to improve device consistency across the whole wafer. In this paper, we use a range of submicron characterization tools to understand the conduction mechanisms through the AlGaN/GaN ohmic contact. Our results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad. The estimated area of these highly conductive pillars is around 5% of the total contact area.