Chemical stability of vanadium boride with aluminum
1988; Elsevier BV; Volume: 166; Linguagem: Inglês
10.1016/0040-6090(88)90363-x
ISSN1879-2731
AutoresE. Kolawa, J. M. Molarius, W. Flick, C. W. Nieh, L.T. Tran, M.−A. Nicolet, F. C. T. So, Jun Wei,
Tópico(s)Silicon and Solar Cell Technologies
ResumoThe stability of r.f.-sputtered vanadium boride thin films is investigated for application as diffusion barriers between silicon and aluminum layers. The composition of VBx barriers is uniform in depth and varies from x = 1.5 to x = 2.7 depending on the sputtering power. The phase VB2 is present at all compositions. Metallurgical interactions in the Si/VB2.0/Al and SiO2/VB2.0/Al systems are studied by backscattering spectrometry and electrical measurements on shallow n+p junctions. We find that VB2.0 films prevent the interdiffusion and reaction between aluminum overlayers and silicon on heat treatment at up to 500°C for 30 min in vacuum.
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