Active-matrix OLED on bendable metal foil
2006; Institute of Electrical and Electronics Engineers; Volume: 53; Issue: 5 Linguagem: Inglês
10.1109/ted.2006.871873
ISSN1557-9646
AutoresJun Hyuk Cheon, Jong Hyun Choi, Ji Ho Hur, Jin Jang, Hyun Soo Shin, Jae Kyeong Jeong, Yeon Gon Mo, Ho Kyoon Chung,
Tópico(s)Organic Electronics and Photovoltaics
ResumoThis brief reports a flexible active-matrix organic light-emitting diode display based on a poly-Si thin-film transistor (TFT) backplane. The p-channel poly-Si TFTs on metal foil exhibited a maximum field-effect mobility of 86.1 cm/sup 2//Vs, threshold voltage of 3.5 V, gate voltage swing of 0.8 V/dec, and the minimum off current of 10/sup -12/ A//spl mu/m at V/sub ds/=-0.1 V. A 4.1-in active-matrix backplane was fabricated with the poly-Si TFT with a conventional pixel circuit consisting of 2 TFTs and one capacitor. The scan driver circuits with PMOS were integrated on the flexible metal foil. The top emission, organic light emitting display having a brightness of 100 cd/m/sup 2/.
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