GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
2012; Optica Publishing Group; Volume: 20; Issue: 25 Linguagem: Inglês
10.1364/oe.20.027297
ISSN1094-4087
AutoresA. Gassenq, Federica Gencarelli, Joris Van Campenhout, Yosuke Shimura, Roger Loo, G. Narcy, Benjamin Vincent, Günther Roelkens,
Tópico(s)Advanced Photonic Communication Systems
ResumoA surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications.
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