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Low threshold current density 1.3 [micro sign]m metamorphic InGaAs/GaAs quantum well laser diodes

2008; Institution of Engineering and Technology; Volume: 44; Issue: 7 Linguagem: Inglês

10.1049/el

1350-911X

Donghai Wu, Hao Wang, Bian Wu, H. Q. Ni, Siyi Huang, Yan Xiong, Meng Wang, Q. Han, Zhichuan Niu, Ivar Tångring, S.M. Wang,

Photonic and Optical Devices

Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 µm is centred at 1337.2 nm; the threshold current density is 205 A/cm2 at room temperature under continuous-wave operation.