AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC
2006; Institute of Electrical and Electronics Engineers; Volume: 18; Issue: 12 Linguagem: Inglês
10.1109/lpt.2006.877351
ISSN1941-0174
AutoresH. X. Jiang, T. Eg, Hiroyasu Ishikawa,
Tópico(s)Nanowire Synthesis and Applications
ResumoSolar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2times10 -10 A/cm 2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm 2 , a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9times10 14 cmmiddotHz 1/2 W -1 was estimated at 256 nm under zero bias
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