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Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

2001; Institute of Electrical and Electronics Engineers; Volume: 48; Issue: 3 Linguagem: Inglês

10.1109/23.940093

1558-1578

Masahiko Sugiho, T. Kamae, Kazuo Makishima, Tadayuki Takahashi, T. Murakami, M. Tashiro, Yasushi Fukazawa, Naoko Iyomoto, Hideki Ozawa, Aya Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, Naomi Ota, C. Tanihata, Naoki Isobe, Y. Terada, Y. Matsumoto, Y. Uchiyama, Daisuke Yonetoku, Isao Takahashi, J. Kotoku, Shin Watanabe, Y. Ezoe,

Radiation Detection and Scintillator Technologies

The ASTRO-E hard X-ray detector utilizes GSO(Gd/sub 2/SiO/sub 5/:Ce 0.5% mol)-BGO(Bi/sub 4/Ge/sub 3/O/sub 12/) well-type phoswich counters in compound-eye configuration to achieve an extremely low background level of about a few times 10/sup -5/ counts s/sup -1/ cm/sup -2/ keV/sup -1/. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, Si p-i-n diodes of 2 mm in thickness and 21.5/spl times/21.5 mm/sup 2/ in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.