Crystal structure and domain-wall contributions to the piezoelectric properties of strontium bismuth titanate ceramics
1996; American Institute of Physics; Volume: 80; Issue: 7 Linguagem: Inglês
10.1063/1.363301
ISSN1520-8850
AutoresIan M. Reaney, Dragan Damjanović,
Tópico(s)Microwave Dielectric Ceramics Synthesis
ResumoThe piezoelectric properties of SrBi4Ti4O15 and Bi4Ti2.95Nb0.04O12 have been compared as a function of applied ac stress. Evidence of domain-wall motion was observed in Bi4Ti2.95Nb0.04O12 but not in SrBi4Ti4O15. Examination of SrBi4Ti4O15 using transmission electron microscopy revealed that the material had undergone an orthorhombic–orthorhombic, paraelectric–ferroelectric, phase transition in which no piezoelectrically active, non-180°, domain walls could be created. However, for the orthorhombic–monoclinic transformation in Bi4Ti2.95Nb0.04O12 new piezoelectrically active domain walls are allowed and were considered to move under applied stress.
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