Artigo Acesso aberto Revisado por pares

Dielectric function of nanocrystalline silicon with few nanometers (<3 nm) grain size

2003; American Institute of Physics; Volume: 82; Issue: 18 Linguagem: Inglês

10.1063/1.1569052

ISSN

1520-8842

Autores

María Losurdo, Maria M. Giangregorio, P. Capezzuto, Giovanni Bruno, M.F. Cerqueira, E. Alves, М. В. Степихова,

Tópico(s)

Semiconductor materials and interfaces

Resumo

The dielectric function of nanocrystalline silicon (nc-Si) with crystallite size in the range of 1 to 3 nm has been determined by spectroscopic ellipsometry in the range of 1.5 to 5.5 eV. A Tauc–Lorentz parameterization is used to model the nc-Si optical properties. The nc-Si dielectric function can be used to analyze nondestructively nc-Si thin films where nanocrystallites cannot be detected by x-ray diffraction and Raman spectroscopy.

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