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Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD

2002; Elsevier BV; Volume: 299-302; Linguagem: Inglês

10.1016/s0022-3093(01)01098-5

1873-4812

Bernd Stannowski, R.E.I. Schropp, Ralf B. Wehrspohn, M. J. Powell,

Silicon Nanostructures and Photoluminescence

We investigate the impact of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs). It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic mechanical stress in the a-Si:H layer. We study a series of bottom-gate TFTs incorporating a-Si:H deposited by VHF PECVD and hot-wire CVD. All TFTs exhibit good characteristics with mobilities of 0.6–0.7cm2/Vs. The mean activation energy EA and the slope of the barrier-height distribution kBT0 for defect creation in the a-Si:H are determined. EA correlates to the intrinsic stress.