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Subthreshold slope in thin-film SOI MOSFETs

1990; Institute of Electrical and Electronics Engineers; Volume: 37; Issue: 9 Linguagem: Inglês

10.1109/16.57165

1557-9646

D. J. Wouters, J.-P. Colinge, H.E. Maes,

Silicon Carbide Semiconductor Technologies

The subthreshold conduction regime in thick- and thin-film SOI MOSFETs is studied. Using the depletion approximation, a one-dimensional analytical expression for the subthreshold slope is derived, and equivalence with a simple capacitive network is proven. The model accounts for the influence of the back interface properties on the subthreshold swing in the thin-film regime. The coupling between front and back surface potential and the influence of the backside conduction on the front interface characteristics are accounted for. The case of double gate control is studied in more detail. Experimental verification of the model with measured subthreshold slopes in thin-form MOSFET devices is given. >