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Write-erase and read paper memory transistor

2008; American Institute of Physics; Volume: 93; Issue: 20 Linguagem: Inglês

10.1063/1.3030873

1520-8842

Rodrigo Martins, Pedro Barquinha, L. Pereira, Nuno Correia, Gonçalo Gonçalves, I. Ferreira, Elvira Fortunato,

Thin-Film Transistor Technologies

We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and −14.5V, on/off ratio and saturation mobilities of about 104 and 40cm2V−1s−1, respectively, and estimated charge retention times above 14000h.