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InGaN‐based 518 and 488 nm laser diodes on c ‐plane GaN substrate

2010; Wiley; Volume: 207; Issue: 6 Linguagem: Inglês

10.1002/pssa.200983446

1862-6319

Takashi Miyoshi, Shingo Masui, Takeshi Okada, Tomoya Yanamoto, Tokuya Kozaki, Shin‐ichi Nagahama, Takashi Mukai,

Ga2O3 and related materials

Abstract We succeeded in fabricating InGaN‐based laser diodes (LDs) with a wavelength of 518 and 488 nm under continuous wave (cw) operation. The both LDs structures were grown on conventional c ‐plane GaN substrates by metal organic chemical vapor deposition (MOCVD). The threshold current and threshold voltage were 45 mA and 5.5 V at 518 nm, 30 mA and 4.5 V at 488 nm, respectively. The lifetime test of these LDs was carried out under high driving temperature up to 80 °C in cw operation. Lifetime was estimated to be over 5000 h with an optical output power of 5 mW at 80 °C in 515–518 nm LDs from 1000 h operation, and was estimated to be over 10,000 h with an output power of 60 mW at 60 °C in 488 nm LDs from 2000 h operation.