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Recent progress in bipolar transistor technology

1995; Institute of Electrical and Electronics Engineers; Volume: 42; Issue: 3 Linguagem: Inglês

10.1109/16.368034

1557-9646

Tohru Nakamura, Hiroshi Nishizawa,

Silicon Carbide Semiconductor Technologies

Recent developments in high speed silicon bipolar device technologies are reviewed. Bipolar device structures that include polysilicon are key technologies for improving circuit characteristics. Double polysilicon bipolar device structures, in particular, have made it possible both to form shallow junctions and to reduce device dimensions. Recent progress of silicon bipolar transistor technology using SiGe and the use of the SOI technology to obtain high speed operations are also reviewed. >