Portal de Periódicos da CAPES

Development of dedicated STEM with high stability

2007; Oxford University Press; Volume: 56; Issue: 1 Linguagem: Inglês

10.1093/jmicro/dfl043

1477-9986

Koji Kimoto, Keigo Nakamura, Shinji Aizawa, S. Isakozawa, Yoshio Matsui,

Integrated Circuits and Semiconductor Failure Analysis

We developed a dedicated scanning transmission electron microscope with high-stability. The mechanical and electronic stabilities of the microscope were substantially improved, e.g. the specimen drift rate was found to be <0.2 nm min(-1). The Fourier transform of an ADF image showed spots of 0.105 nm at an acceleration voltage of 200 kV without spherical aberration corrector. The stabilized STEM instrument allows us to acquire distortion-free STEM images and high-signal to noise ratio analyses. We have shown the outline of the instrument and preliminary results.