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Non-covalent doping of graphitic carbon nitride polymer with graphene: controlled electronic structure and enhanced optoelectronic conversion

2011; Royal Society of Chemistry; Volume: 4; Issue: 11 Linguagem: Inglês

10.1039/c1ee01400e

1754-5706

Yuanjian Zhang, Toshiyuki Mori, Li Niu, Jinhua Ye,

Ga2O3 and related materials

By union of graphitic carbon nitride polymer with reduced graphene oxide (rGO, ≤1 wt%) via π–π stacking interaction, the band structure of carbon nitride could be well modulated. As a result, a significant increase of photocurrent was observed (e.g., when biased at 0.4 V vs.Ag/AgCl, the anodic photocurrent became 300% higher after doping). Not merely interesting in itself, graphene was also used as a general dopant for semiconductors in band-structure engineering.