Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy
2000; Wiley; Volume: 218; Issue: 2 Linguagem: Inglês
10.1002/1521-3951(200004)218
ISSN1521-3951
AutoresK. Jacobi, J. Platen, C. Setzer,
Tópico(s)Semiconductor materials and devices
Resumophysica status solidi (b)Volume 218, Issue 2 p. 329-364 Review Article Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy K. Jacobi, K. Jacobi Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, GermanySearch for more papers by this authorJ. Platen, J. Platen Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, GermanySearch for more papers by this authorC. Setzer, C. Setzer Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, GermanySearch for more papers by this author K. Jacobi, K. Jacobi Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, GermanySearch for more papers by this authorJ. Platen, J. Platen Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, GermanySearch for more papers by this authorC. Setzer, C. Setzer Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, GermanySearch for more papers by this author First published: 14 June 2000 https://doi.org/10.1002/1521-3951(200004)218:2 3.0.CO;2-ICitations: 14AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract The GaAs(001), (110), (111)A, (1¯1¯1¯)B, (112)A, (1¯1¯2¯)B, (113) A, (1¯1¯3¯)B, (114)A and (1¯1¯4¯)B surfaces were prepared by molecular-beam epitaxy (MBE) and analyzed in situ by photoelectron spectroscopy of the Ga and As 3d core levels using synchrotron radiation. An overview of the results is given. For each surface also a brief summary of its structure is added. It is shown how surface core-level shifts (SCLS) act as a tool supporting the structure evaluation of these surfaces. The (001) and (110) surfaces are touched only briefly for comparison. The (111) surfaces are discussed more deeply. The high-index surfaces can be characterized as follows: (113)A exhibits a low-energy surface and a new type of reconstruction which consists of As-dimer zig-zag chains; (112)A and (1¯1¯2¯)B are heavily faceted and (114)A and (1¯1¯4¯)B are quite well understood in analogy to the (001) surface. Citing Literature Volume218, Issue2April 2000Pages 329-364 RelatedInformation
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