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Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

2007; Elsevier BV; Volume: 515; Issue: 15 Linguagem: Inglês

10.1016/j.tsf.2006.12.050

1879-2731

O. Vigil‐Galán, E. Sánchez‐Meza, Carmen M. Ruiz, J. Sastré‐Hernández, Arturo Morales‐Acevedo, Francisco Cruz‐Gandarilla, J. Aguilar‐Hernández, Edgardo Saucedo, G. Contreras‐Puente, V. Bermúdez,

Silicon and Solar Cell Technologies

The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (Jsc), open circuit voltage (VOC), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed.