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Doping effect in layer structured SrBi2Nb2O9 ferroelectrics

2001; American Institute of Physics; Volume: 90; Issue: 10 Linguagem: Inglês

10.1063/1.1413236

1520-8850

Yun Wu, Mike J. Forbess, S. Seraji, Steven J. Limmer, Tammy P. Chou, C. Nguyen, Guozhong Cao,

Acoustic Wave Resonator Technologies

This article reports a systematic study of doping effects on the crystal structure, microstructure, dielectric, and electrical properties of layer-structured strontium bismuth niobate, SrBi2Nb2O9 (SBN), ferroelectrics. Substitution in both the A site (Sr2+ by Ca2+ and Ba2+) and B site (Nb5+ by V5+) up to 30 at % were studied. It was found that crystal lattice constant, dielectric, and electrical properties of SBN ferroelectrics varied appreciably with the type and amount of dopants. The relationships among the ionic radii, structural constraint imposed by [Bi2O2]2+ interlayers, and properties were discussed.