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Distributed phase shifter with pyrochlore bismuth zinc niobate thin films

2006; IEEE Microwave Theory and Techniques Society; Volume: 16; Issue: 5 Linguagem: Inglês

10.1109/lmwc.2006.873528

1558-1764

Jae‐Hoon Park, Jiwei Lu, Damien S. Boesch, Susanne Stemmer, R.A. York,

Advanced Condensed Matter Physics

A monolithic Ku-band phase shifter employing voltage tunable Bi/sub 1.5/Zn/sub 1.0/Nb/sub 1.5/O/sub 7/ (BZN) thin film parallel plate capacitors is reported. BZN films were deposited by radio frequency magnetron sputtering on single-crystal sapphire substrates. A nine-section distributed coplanar waveguide loaded-line phase-shifter structure was designed. A differential phase shift of 175/spl deg/ was achieved with a maximum insertion loss of 3.5 dB at 15 GHz, giving a figure of merit /spl sim/50/spl deg//dB. To the best of our knowledge, this is the first demonstration of a monolithic tunable microwave circuit using BZN thin films.