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Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

2012; Royal Society of Chemistry; Volume: 4; Issue: 10 Linguagem: Inglês

10.1039/c2nr30330b

2040-3372

Hyun Jae Song, Minhyeok Son, Chibeom Park, Hyunseob Lim, Mark Levendorf, Adam W. Tsen, Jiwoong Park, Hee Cheul Choi,

Semiconductor materials and devices

Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.