Metallic transport properties of conducting Langmuir-Blodgett films
1995; Elsevier BV; Volume: 71; Issue: 1-3 Linguagem: Inglês
10.1016/0379-6779(94)03136-t
ISSN1879-3290
AutoresToshikazu Nakamura, Gen Yunome, Munehisa Matsumoto, Yasuhiro F. Miura, Sachio Horiuchi, Hideki Yamochi, Genta Saito, H. Isotalo, H. Stubb,
Tópico(s)Nonlinear Dynamics and Pattern Formation
ResumoThe conductivity of the Langmuir-Blodgett (LB) films was examined in terms of a granular structure. The conductivity of bis(ethylenedioxy)tetrathiafulvalene-decyltetracyanoquinodimethane (BO-C10TCNQ) LB film was well fitted by the formula, σ = AT−αexp(-Ea/kT), where the behavior is determined by the semiconducting domain boundaries in the granular-structured film. The metallic nature of the domains was revealed by thermoelectric power measurements: the temperature dependence of the thermoelectric power was almost linear with T. The temperature dependence of the conductivity in tridecylmethylammonium-Au(dmit)2 (3C10-Au) LB film is well explained by a linear combination of Sheng's model and common metal, R = C1exp[T1(T+T0)] + C2T. The conduction was governed by the fluctuation-induced tunneling between metallic domains.
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