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Intermediate band mobility in heavily titanium-doped silicon layers

2009; Elsevier BV; Volume: 93; Issue: 9 Linguagem: Inglês

10.1016/j.solmat.2009.05.014

1879-3398

G. González-Dı́az, J. Olea, I. Mártil, David Pastor, Antonio Martı́, E. Antolín, A. Ĺuque,

Nanowire Synthesis and Applications

The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 1021 cm−3, are measured in the 90–370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed.