A NOVEL EPSILON NEAR ZERO (ENZ) TUNNELING CIRCUIT USING MICROSTRIP TECHNOLOGY FOR HIGH INTEGRABILITY APPLICATIONS
2010; The Electromagnetics Academy; Volume: 15; Linguagem: Inglês
10.2528/pierc10060202
ISSN1937-8718
AutoresD. V. B. Murthy, Alonso Corona‐Chávez, José‐Luis Olvera‐Cervantes,
Tópico(s)Photonic and Optical Devices
ResumoA novel compact Epsilon Near Zero (ENZ) tunneling circuit with microstrip coupling for high integrability applications is presented. Full design procedure, simulation and experimental results are shown, and a methodology to extract the efiective permittivity and propagation constants in the tunnel is described. Detailed analysis of the dependence on external quality factor and tunnel to feed height ratio is investigated. Simulation and measurement results of the ENZ tunnel structure are in good agreement.
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