Novel Nanoelectronic Triodes and Logic Devices With TBJs
2004; Institute of Electrical and Electronics Engineers; Volume: 25; Issue: 4 Linguagem: Inglês
10.1109/led.2004.824841
ISSN1558-0563
AutoresH. Q. Xu, Ivan Shorubalko, Daniel Wallin, Ivan Maximov, P. Omling, Lars Samuelson, W. Seifert,
Tópico(s)Quantum and electron transport phenomena
ResumoIn this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.
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