An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects
1992; Institute of Electrical and Electronics Engineers; Volume: 13; Issue: 1 Linguagem: Inglês
10.1109/55.144940
ISSN1558-0563
AutoresD. Chen, Edwin C. Kan, Umberto Ravaioli, Chi‐Wang Shu, R.W. Dutton,
Tópico(s)Silicon Carbide Semiconductor Technologies
ResumoAn improved energy transport model for device simulation is derived from the zeroth and second moments of the Boltzmann transport equation (BTE) and from the presumed functional form of the even part of the carrier distribution in momentum space. Energy-band nonparabolicity and non-Maxwellian distribution effects are included to first order. The model is amenable to an efficient self-consistent discretization taking advantage of the similarity between current and energy flow equations. Numerical results for ballistic diodes and MOSFETs are presented. Typical spurious velocity overshoot spikes, obtained in conventional hydrodynamic (HD) simulations of ballistic diodes, are virtually eliminated. >
Referência(s)