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GaAs-based opto-thyristor for pulsed power applications

1990; Institute of Electrical and Electronics Engineers; Volume: 37; Issue: 12 Linguagem: Inglês

10.1109/16.64528

1557-9646

Jung Hur, P. Hadizad, S.G. Hummel, K.M. Dzurko, P.D. Dapkus, H. R. Fetterman, Martin A. Gundersen,

Silicon and Solar Cell Technologies

An optically gated GaAs bipolar junction thyristor, with a semi-insulating base layer, has been studied, and the characteristics of the device as a pulsed power switch are presented. The maximum DC blocking voltage of the device was larger than 800 V, the maximum peak current in pulsed mode was higher than 300 AA, and the current rate of rise was better than 1.5*10/sup 10/ A/s. These results demonstrate that GaAs-based junction devices have significant potential as switching elements for pulsed power systems requiring very fast closing times. >