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Photoluminescence Properties of Ge-Implanted CuGaSe2 Crystals

2000; Wiley; Volume: 178; Issue: 2 Linguagem: Inglês

10.1002/1521-396x(200004)178

1521-396X

J. Krustok, J. Raudoja, J.H. Sch�n,

Semiconductor materials and interfaces

physica status solidi (a)Volume 178, Issue 2 p. 805-809 Original Paper Photoluminescence Properties of Ge-Implanted CuGaSe2 Crystals J. Krustok, J. Krustok krustok@cc.ttu.ee Tallinn Technical University, Ehitajate tee 5, Tallinn 19086, EstoniaSearch for more papers by this authorJ. Raudoja, J. Raudoja Tallinn Technical University, Ehitajate tee 5, Tallinn 19086, EstoniaSearch for more papers by this authorJ.H. Schön, J.H. Schön Faculty of Physics, University of Konstanz, P.O. Box X916, D-78457 Konstanz, GermanySearch for more papers by this author J. Krustok, J. Krustok krustok@cc.ttu.ee Tallinn Technical University, Ehitajate tee 5, Tallinn 19086, EstoniaSearch for more papers by this authorJ. Raudoja, J. Raudoja Tallinn Technical University, Ehitajate tee 5, Tallinn 19086, EstoniaSearch for more papers by this authorJ.H. Schön, J.H. Schön Faculty of Physics, University of Konstanz, P.O. Box X916, D-78457 Konstanz, GermanySearch for more papers by this author First published: 14 June 2000 https://doi.org/10.1002/1521-396X(200004)178:2 3.0.CO;2-KCitations: 10AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Photoluminescence (PL) properties of Ge-doped CuGaSe2 single crystals were studied in the temperature range between 8 and 300 K. The doping was done using the ion implantation technique. As-grown crystals exhibit two PL bands at 1.68 and 0.96 eV. The Ge doping gives rise to two additional deep PL bands at 1.28 and 0.73 eV. Based on the temperature quenching of these PL bands we show that the 1.68 and the 0.73 eV PL bands are probably both related to the VCu acceptor. We suppose that the (VCu–GeCu) complex where the Ge donor defect has a double charge is responsible for the 0.73 eV band. The 0.96 and 1.28 eV bands are explained as close donor–acceptor pairs where the acceptor defect is VGa. We assume that the single charged GeCu donor defect paired with the VGa is connected with the 1.28 eV PL band while an unknown intrinsic donor paired with the VGa is responsible for the 0.96 eV band. Citing Literature Volume178, Issue2April 2000Pages 805-809 RelatedInformation