Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD
2002; Elsevier BV; Volume: 46; Issue: 9 Linguagem: Inglês
10.1016/s0038-1101(02)00085-0
ISSN1879-2405
AutoresKow-Ming Chang, Chao-Chen Cheng, C.C. Lang,
Tópico(s)Semiconductor materials and devices
ResumoSilicon nitride (SiN) film was deposited at 300 °C as the insulating layer of a GaN-based metal–insulator–semiconductor (MIS) diode by using electron cyclotron resonance chemical vapor deposition (ECR-CVD) with silane-to-nitrogen (SiH4/N2) flow ratio of 5/45. The deposited film had the refractive index of 1.9–2.0 and the relative dielectric constant of 6. Capacitance–voltage (C–V) characteristics were measured at 1 MHz and interface state densities were obtained by Terman's method. The negative fixed charge density of the SiN film was 1.1×1011 cm−2 and its breakdown field was greater than 5.7 MV/cm even at 350 °C. The value of the interface state density was less than 4×1011 cm−2 around the mid-gap and its minimum was 5×1010 cm−2 eV−1 at 0.6 eV below the conduction band edge. From these results, the SiN film deposited by ECR-CVD is a promising gate dielectric for high temperature GaN-MISFET application.
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