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Influence of H[sub 2]O Dipole on Subthreshold Swing of Amorphous Indium–Gallium–Zinc-Oxide Thin Film Transistors

2010; Electrochemical Society; Volume: 14; Issue: 3 Linguagem: Inglês

10.1149/1.3526097

1944-8775

Wan-Fang Chung, Ting‐Chang Chang, Hung-Wei Li, Chi‐Wen Chen, Yi‐Chun Chen, Shih-Ching Chen, Tseung–Yuen Tseng, Ya‐Hsiang Tai,

ZnO doping and properties

The original influence of water on the back-channel of sol–gel derived amorphous indium–gallium–zinc-oxide thin film transistors was studied in various relative humidity environments. As humidity increased from 0 to 80%, the mobility increased from , threshold voltage decreased from , and subthreshold swing changed from . The conflicting phenomenon among the three parameters was suggested to be due to a division of the gate voltage by the water molecules which adsorbed on the thin film transistor back-channel and acted as dipoles.