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Sub-10-nm Size and Sub-40-nm Pitch Metal Dot Patterning for Low-Cost Bit Patterned Media Application

2014; Institute of Electrical and Electronics Engineers; Volume: 13; Issue: 3 Linguagem: Inglês

10.1109/tnano.2014.2307574

1941-0085

Landobasa Y. M. Tobing, Liliana Tjahjana, Dao Hua Zhang,

Copper Interconnects and Reliability

This paper presents the capability of sonicated cold development process for sub-40-nm pitch metal dots patterning with potentially ~100 times shorter writing time, where lift-off pattern transfer of ~10-nm-sized metal dots at pitch as short as ~34 nm from 110-nm-thick positive-tone resist is demonstrated with good repeatability. Strategies to achieve sub-30-nm pitch are also discussed based on overlay nanofabrication approaches, which we believe could pave the way toward cost-effective 1 Tbit/in 2 bit-patterned-media patterning.