Trench depth measurement system for VLSI DRAM's capacitor cells using optical fiber and michelson interferometer
1987; Institute of Electrical and Electronics Engineers; Volume: 5; Issue: 7 Linguagem: Inglês
10.1109/jlt.1987.1075606
ISSN1558-2213
AutoresK. Takada, Koji Chida, J. Noda, S. Nakajima,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoA simple method to precisely measure the trench depth of VLSI DRAM's capacitor cells is presented. The measurement system uses a Michelson interferometer and a white light source. The trench depth is transformed into the optical path difference between the central peak and one of sideband peaks produced during one-way scan of a mirror in a Michelson interferometer. The measurement error was within \pm0.2 \mu m for trench depths of 2-5 \mu m. The multimode fiber used in the system facilitates wafer setup so that the system can be introduced into an in-process measurement system.
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